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SI4892DY-T1-E3

Part No SI4892DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 8.8A 8-Pin SOIC N T/R / MOSFET N-CH 30V 8.8A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 10.5nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 12.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028549-SI4892DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si4892DY
Introduction Date February 05, 2001
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4892DY-T1-E3 CAD Model

Description

The Vishay Si4892DY is an N-channel MOSFET transistor that is commonly used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8.8A
  • Maximum Rds On @ Id, Vgs: 12 mOhm @ 12.4A, 10V
  • Gate-Source Threshold Voltage: 800mV @ 250μA (Min)
  • Maximum Gate Charge: 10.5nC @ 5V
  • Maximum Input Capacitance: not specified
  • Gate-Source Voltage: ±20V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: obsolete (EOL)
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5382 $59.2020
265+ $0.4424 $117.2360
405+ $0.4285 $173.5425
560+ $0.4146 $232.1760
725+ $0.4008 $290.5800
965+ $0.3592 $346.6280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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