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SI4896DY-T1-E3 Real Image SI4896DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI4896DY-T1-E3 Real Image SI4896DY-T1-E3 Real Image
SI4896DY-T1-E3 Real Image SI4896DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4896DY-T1-E3

Part No SI4896DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 6.7A 8-SOIC
Datasheet
SI4896DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2V @ 250μA (Min)
Max Gate Charge 41nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.56W (Ta)
Maximum Rds On at Id,Vgs 16.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096028-SI4896DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4896DY-T1-E3 CAD Model

Description

The SI4896DY-T1-E3 is a Discrete Semiconductor Product from Vishay that comes in a Reel - TR packaging with SMD (SMT) mounting.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Power Dissipation (Max): 1.56W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 6.7A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 250μA (Min)
  • Max Gate Charge: 41nC @ 10V
  • Maximum Rds On @ Id,Vgs: 16.5 mOhm @ 10A, 10V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Case/Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature: -55°C to 150°C (TJ)

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