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Same model may have multiple batches, images only for reference.
SI4900DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4900DY-T1-GE3

Part No SI4900DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 5.3A 8-SOIC  /  Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC
Datasheet
SI4900DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V
Power - Max 3.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number SI4900
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SI4900DY-T1-GE3DKR,SI4900DY-T1-GE3TR,SI4900DY-T1-GE3CT,SI4900DY-T1-GE3-ND
Standard Package 2,500
Win Source Part Number 965566-SI4900DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4900DY-T1-GE3 CAD Model

Description

The SI4900DY-T1-GE3 is a 2 N-Channel Dual MOSFET that comes with a drain to source voltage of 60V and continuous drain current of 5.3A.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 5.3A
  • FET Feature: Logic level gate
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Power Rating: 3.1W
  • Package/Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier: Vishay Siliconix

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175+ $0.6791 $118.8425
265+ $0.6580 $174.3700
365+ $0.6368 $232.4320
470+ $0.6155 $289.2850
630+ $0.5519 $347.6970
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