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Same model may have multiple batches, images only for reference.
SI4914DY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4914DY-T1-E3

Part No SI4914DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.5A 8-SOIC
Datasheet
SI4914DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.5A, 5.7A
Maximum Rds On at Id,Vgs 23 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 8.5nC @ 4.5V
Maximum Power Dissipation 1.1W, 1.16W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 099886-SI4914DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4914DY-T1-E3 CAD Model

Description

The Vishay 099886-SI4914DY-T1-E3 is a 2 N-Channel (Half Bridge) logic level gate FET.

  • Maximum Power Dissipation: 1.1W and 1.16W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 5.5A and 5.7A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 8.5nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C
  • Commonly used in: power supply circuits and motor control circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2338 $61.6900
115+ $1.0124 $116.4260
180+ $0.9807 $176.5260
245+ $0.9491 $232.5295
315+ $0.9175 $289.0125
425+ $0.8226 $349.6050
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Availability: 41,700 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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