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Same model may have multiple batches, images only for reference.
SI4936CDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4936CDY-T1-E3

Part No SI4936CDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.8A 8SO
Datasheet
SI4936CDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A
Maximum Rds On at Id,Vgs 40 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 325pF @ 15V
Maximum Power Dissipation 2.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 042613-SI4936CDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4936CDY-T1-E3 CAD Model

Description

The Vishay 042613-SI4936CDY-T1-E3 is a dual N-channel logic level gate FET type electronic component.

  • Supply and Demand Status: sufficient
  • Maximum Power Dissipation: 2.3W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 9nC @ 10V
  • Maximum Input Capacitance: 325pF @ 15V
  • Maximum Rds On at Id,Vgs: 40 mOhm @ 5A, 10V
  • Case/Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,190 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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