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Same model may have multiple batches, images only for reference.
SI4942DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4942DY-T1-E3

Part No SI4942DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 5.3A 8-SOIC
Datasheet
SI4942DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 5.3A
Maximum Rds On at Id,Vgs 21 mOhm @ 7.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 32nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096039-SI4942DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4942DY-T1-E3 CAD Model

Description

The Vishay 1096039-SI4942DY-T1-E3 is a dual N-channel logic level gate FET with a breakdown voltage of 40V and a continuous drain current of 5.3A @ 25°C.

  • Breakdown Voltage: 40V
  • Continuous Drain Current: 5.3A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Rds On @ Id, Vgs: 21 mOhm @ 7.4A, 10V
  • Package: 8-SO
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 1.1W
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2437 $58.4880
575+ $0.2010 $115.5750
895+ $0.1940 $173.6300
1,230+ $0.1883 $231.6090
1,595+ $0.1813 $289.1735
2,130+ $0.1629 $346.9770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,370 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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