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Same model may have multiple batches, images only for reference.
SI4943BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4943BDY-T1-GE3

Part No SI4943BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 6.3A 8-SOIC
Datasheet
SI4943BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.3A
Maximum Rds On at Id,Vgs 19 mOhm @ 8.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096040-SI4943BDY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SI4943BDY-T1-GE3 CAD Model

Description

The Vishay 1096040-SI4943BDY-T1-GE3 is a P-Channel FET with a breakdown voltage of 20V.

  • Package: 8-SO
  • Category: Discrete Semiconductor Products
  • Status: active
  • Used In: Industrial, Power Management, Computers & Computer Peripherals
  • Maximum Power Dissipation: 1.1W
  • Continuous Drain Current: 6.3A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On: 19 mOhm @ 8.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5927 $63.7080
90+ $1.3069 $117.6210
140+ $1.2661 $177.2540
190+ $1.2252 $232.7880
245+ $1.1845 $290.2025
330+ $1.0619 $350.4270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,900 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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