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SI4943CDY-T1-GE3 Real Image SI4943CDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.
SI4943CDY-T1-GE3 Real Image SI4943CDY-T1-GE3 Real Image
SI4943CDY-T1-GE3 Real Image SI4943CDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4943CDY-T1-GE3

Part No SI4943CDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 8A 8-SOIC
Datasheet
SI4943CDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 19.2 mOhm @ 8.3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1945pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096041-SI4943CDY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4943CDY-T1-GE3 CAD Model

Description

The Vishay SI4943CDY-T1-GE3 is a P-Channel Dual FET manufactured by Vishay.

  • Supply and Demand Status: limited
  • Application: power management
  • Gate Type: logic level
  • Maximum Power Dissipation: 3.1W
  • RoHS Compliant: Yes
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6886 $50.6580
75+ $1.3855 $103.9125
115+ $1.3422 $154.3530
155+ $1.2989 $201.3295
200+ $1.2556 $251.1200
270+ $1.1257 $303.9390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,200 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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