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SI4953ADY-T1-GE3

Part No SI4953ADY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 3.7A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A
Maximum Rds On at Id,Vgs 53 mOhm @ 4.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 25nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096047-SI4953ADY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SI4953ADY-T1-GE3 CAD Model

Description

The Vishay SI4953ADY-T1-GE3 is a dual P-channel FET that is widely used in power management, consumer electronics, and computers & computer peripherals.

  • Logic-Level Gate Feature: Yes
  • Package: 8-SO
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.7A
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 25nC @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: cut reel
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4899 $59.5960
95+ $1.2225 $116.1375
150+ $1.1843 $177.6450
205+ $1.1461 $234.9505
265+ $1.1079 $293.5935
350+ $0.9933 $347.6550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,150 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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