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SI5406CDC-T1-GE3

Part No SI5406CDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 6A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 6 V
Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Product Number SI5406
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666614-SI5406CDC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5406CDC-T1-GE3 CAD Model

Description

The 666614-SI5406CDC-T1-GE3 is an N-channel MOSFET transistor from the TrenchFET™ series.

  • Type: N-channel MOSFET
  • Series: TrenchFET™
  • Drain-to-Source Voltage: 12V
  • Continuous Drain Current: 6A
  • On-Resistance: 20mΩ @ 6.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Mounting: surface mount
  • Package: 8-SMD, flat lead

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4714 $58.8560
100+ $1.2074 $120.7400
150+ $1.1696 $175.4400
205+ $1.1319 $232.0395
265+ $1.0942 $289.9630
355+ $0.9810 $348.2550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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