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Same model may have multiple batches, images only for reference.
SI5435BDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5435BDC-T1-GE3

Part No SI5435BDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.3A 1206-8
Datasheet
SI5435BDC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 45 mOhm @ 4.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 094367-SI5435BDC-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5435BDC-T1-GE3 CAD Model

Description

The Vishay 094367-SI5435BDC-T1-GE3 MOSFET is a P-channel device that is designed for use in SMD (SMT) mounting applications.

  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.3A
  • Maximum Rds On: 45 mOhm @ 4.3A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 24nC @ 10V
  • Input Capacitance: 1100 pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Package: 1206-8 ChipFET
  • Packaging: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7842 $62.4470
80+ $1.4640 $117.1200
125+ $1.4183 $177.2875
170+ $1.3725 $233.3250
220+ $1.3268 $291.8960
295+ $1.1896 $350.9320
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Availability: 1,250 pieces
MOQ: 35 pcs
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