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Same model may have multiple batches, images only for reference.
SI5443DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5443DC-T1-GE3

Part No SI5443DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±12V
Power Dissipation (Max) 1.3W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 1206-8 ChipFET™
Package / Case 8-SMD, Flat Lead
Base Product Number SI5443
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277528-SI5443DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5443DC-T1-GE3 CAD Model

Description

The SI5443DC-T1-GE3 is a MOSFET transistor from the TrenchFET series by Vishay Siliconix.

  • FET Type: P-channel
  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 3.6A @ 25°C
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250μA (Min)
  • Gate Charge: 14 nC @ 4.5V
  • Package: 8-SMD, flat lead
  • Power Dissipation: 1.3W
  • Operating Temperature Range: -55°C to 150°C

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