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SI5445BDC-T1-E3

Part No SI5445BDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 5.2A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 21nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 33 mOhm @ 5.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 100613-SI5445BDC-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5445BDC-T1-E3 CAD Model

Description

The Vishay SI5445BDC-T1-E3 is a P-Channel MOSFET transistor that is widely used in various electronic applications.

  • Package: 1206-8 ChipFET
  • Dimension: 8-SMD, Flat Lead
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 5.2A (Ta) @ 25°C
  • Maximum Rds On: 33 mOhm @ 5.2A, 4.5V
  • Maximum Gate Charge: 21nC @ 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate-Source Voltage: ±8V
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 1.8V to 4.5V
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2451 $58.8240
575+ $0.2012 $115.6900
890+ $0.1949 $173.4610
1,225+ $0.1887 $231.1575
1,585+ $0.1823 $288.9455
2,125+ $0.1635 $347.4375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,800 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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