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Same model may have multiple batches, images only for reference.
SI5509DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5509DC-T1-E3

Part No SI5509DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 6.1A 1206-8 / Trans MOSFET N/P-CH 20V 5A/3.9A 8-Pin Chip FET T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 6.1A, 4.8A
Rds On (Maximum) @ Id, Vgs 52 mOhm @ 5A, 4.5V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 6.6nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 455pF @ 10V
Power - Max 4.5W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SMD, Flat Lead
Manufacturer Package 1206-8 ChipFET
Win Source Part Number 794299-SI5509DC-T1-E3
Popularity Medium
Supply and Demand Status Limited
Family Name Si5509DC
Introduction Date March 30, 2006
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI5509DC-T1-E3 CAD Model

Description

The Vishay Siliconix SI5509DC-T1-E3 is a TrenchFET N and P-channel logic level gate FET designed for discrete semiconductor products.

  • Package: 8-SMD, flat lead
  • Mounting: SMT
  • Continuous Drain Current: 6.1A and 4.8A @ 25°C
  • Maximum Power: 4.5W
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain-Source Voltage: 20V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge: 6.6nC @ 5V
  • Alternative Parts: TT8M1TR, TT8M1, NTHD3100CT3G, NTHD3100C
  • Status: Obsolete (EOL)
  • Standard Package: 1206-8 ChipFETs

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110+ $1.0565 $116.2150
170+ $1.0235 $173.9950
235+ $0.9905 $232.7675
305+ $0.9574 $292.0070
405+ $0.8584 $347.6520
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