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Same model may have multiple batches, images only for reference.
SI5513CDC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5513CDC-T1-GE3

Part No SI5513CDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 4A 1206-8
Datasheet
SI5513CDC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A, 3.7A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4.2nC @ 5V
Max Input Capacitance 285pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 028578-SI5513CDC-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5513CDC-T1-GE3 CAD Model

Description

The SI5513CDC-T1-GE3 electronic component is manufactured by Vishay and has a medium popularity.

  • Mounting: Surface-mount
  • Type: N and P-channel FET
  • Gate Feature: logic level gate feature
  • Maximum Power Dissipation: 3.1W
  • Continuous Drain Current: 4A
  • Maximum Rds On at Id,Vgs: 55 mOhm @ 4.4A, 4.5V
  • Suitable for: DC-DC converters, motor drives, and power management systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0527 $51.3175
60+ $1.6843 $101.0580
92+ $1.6316 $150.1072
127+ $1.5790 $200.5330
164+ $1.5264 $250.3296
220+ $1.3685 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 57,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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