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SI4532CDY-T1-GE3

Part No SI4532CDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A, 4.3A
Maximum Rds On at Id,Vgs 47 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9nC @ 10V
Max Input Capacitance 305pF @ 15V
Maximum Power Dissipation 2.78W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028509-SI4532CDY-T1-GE3
Family Name Si4532CDY
Introduction Date April 09, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI4532CDY-T1-GE3 CAD Model

Description

The Vishay 028509-SI4532CDY-T1-GE3 is a standard N and P-channel FET that has a high popularity and limited supply and demand status.

  • Maximum Power Dissipation: 2.78W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6A and 4.3A
  • Maximum Rds On @ Id,Vgs: 47 mOhm @ 3.5A, 10V
  • Used In: Power management
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3089 $50.9685
350+ $0.2894 $101.2900
540+ $0.2796 $150.9840
770+ $0.2600 $200.2000
1,000+ $0.2503 $250.3000
1,250+ $0.2405 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 52,580 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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