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Same model may have multiple batches, images only for reference.
SI5855DC-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI5855DC-T1-E3

Part No SI5855DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.7A 1206-8
Datasheet
SI5855DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 7.7nC @ 4.5V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 103770-SI5855DC-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI5855DC-T1-E3 CAD Model

Description

The Vishay 103770-SI5855DC-T1-E3 is a medium-popularity electronic component with limited supply and demand status.

  • Type: P-channel MOSFET
  • Feature: Schottky diode (isolated)
  • Design: Designed to provide efficient performance in various electronic applications
  • Recommendation: It is recommended to purchase this electronic component as soon as possible

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2599 $58.4775
545+ $0.2125 $115.8125
840+ $0.2067 $173.6280
1,160+ $0.1998 $231.7680
1,500+ $0.1929 $289.3500
2,000+ $0.1733 $346.6000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,400 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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