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SI5903DC-T1-GE3

Part No SI5903DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.1A
Rds On (Max) @ Id, Vgs 155mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Power - Max 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5903
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278466-SI5903DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5903DC-T1-GE3 CAD Model

Description

The SI5903DC-T1-GE3 is a dual P-Channel 20V MOSFET from Vishay. This device integrates two P-Channel MOSFETs into a single PowerPAK SC-70 package. It is designed for efficient power management and load switching in portable and space-constrained applications. Key features include low on-resistance, fast switching speeds, and the ability to handle moderate current levels. The dual configuration provides design flexibility for synchronous rectification and other applications.

Applications:

  • Load Switching
  • Power Management in Portable Devices
  • Battery Management Systems
  • DC-DC Conversion
  • Synchronous Rectification

Features:

  • Dual P-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • Fast Switching Speed
  • 20V Drain-Source Voltage (VDS)
  • Small Footprint (PowerPAK SC-70)
  • TrenchFET® Power MOSFET Technology
  • Halogen-free according to IEC 61249-2-21 Definition

Benefits:

  • High Efficiency: Low on-resistance minimizes power loss during conduction, resulting in higher efficiency and reduced heat generation.
  • Space Saving: Integration of two MOSFETs in a single package saves board space, making it ideal for compact designs.
  • Fast Switching: Fast switching speed reduces switching losses and enhances overall system performance.
  • Design Flexibility: The dual configuration provides flexibility in circuit design, enabling applications like synchronous rectification.
  • Reliable Performance: Vishay MOSFETs are known for their robustness and consistent performance.

Additional Details:

The SI5903DC-T1-GE3 comes in a PowerPAK SC-70 package. The specific RDS(on) values are dependent on the gate-source voltage (VGS) and drain current (ID). It is RoHS compliant. For detailed electrical characteristics, thermal performance, and application guidelines, consult the datasheet. It is suitable for power management applications needing high efficiency and a small footprint.

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