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Same model may have multiple batches, images only for reference.
SI5920DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5920DC-T1-E3

Part No SI5920DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 8V 4A 1206-8
Datasheet
SI5920DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 32 mOhm @ 6.8A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 680pF @ 4V
Maximum Power Dissipation 3.12W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 105385-SI5920DC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5920DC-T1-E3 CAD Model

Description

The Vishay 105385-SI5920DC-T1-E3 is a high-quality dual N-channel Logic Level Gate FET that offers reliable performance. This FET is designed with advanced features that make it ideal for use in a wide range of electronic devices.

  • Manufacturer: Vishay
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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Quantity Unit Price Ext. Price
80+ $0.7371 $58.9680
195+ $0.6049 $117.9555
300+ $0.5860 $175.8000
410+ $0.5671 $232.5110
530+ $0.5482 $290.5460
710+ $0.4915 $348.9650
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Availability: 7,120 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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