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Same model may have multiple batches, images only for reference.
SI7374DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7374DP-T1-E3

Part No SI7374DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A PPAK SO-8
Datasheet
SI7374DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 122nC @ 10V
Max Input Capacitance 5500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 56W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 23.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 132374-SI7374DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7374DP-T1-E3 CAD Model

Description

The Vishay SI7374DP-T1-E3 is an N-Channel MOSFET with an SMD (SMT) mounting.

  • Channel Type: N-Channel MOSFET
  • Mounting: SMD (SMT)
  • Power Dissipation: 5W (Ta), 56W (Tc)
  • Maximum Gate Charge: 122nC @ 10V
  • Maximum Rds On: 5.5 mOhm @ 23.8A, 10V
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 24A (Tc) @ 25°C
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.6209 $60.2807
54+ $2.1506 $116.1324
84+ $2.0834 $175.0056
115+ $2.0162 $231.8630
149+ $1.9489 $290.3861
199+ $1.7473 $347.7127
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