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Same model may have multiple batches, images only for reference.
SI5935DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5935DC-T1-GE3

Part No SI5935DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3A 1206-8
Datasheet
SI5935DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 86 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 8.5nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096099-SI5935DC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5935DC-T1-GE3 CAD Model

Description

The Vishay SI5935DC-T1-GE3 is a dual P-channel FET with a logic level gate.

  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Gate Charge (Max): 8.5nC @ 4.5V
  • Rds On (Max) @ Id,Vgs: 86 mOhm @ 3A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 1206-8 ChipFET
  • Supply and Demand Status: balanced

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