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Same model may have multiple batches, images only for reference.
SI6413DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6413DQ-T1-GE3

Part No SI6413DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7.2A 8TSSOP
Datasheet
SI6413DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 400μA
Max Gate Charge 105nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 10 mOhm @ 8.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1096101-SI6413DQ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6413DQ-T1-GE3 CAD Model

Description

The SI6413DQ-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of 20V and a maximum Rds On @ Id,Vgs of 10 mOhm @ 8.8A, 4.5V manufactured by Vishay.

  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On: 10 mOhm @ 8.8A, 4.5V
  • Power Dissipation (max): 1.05W (Ta)
  • Continuous Drain Current: 7.2A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 800mV @ 400μA
  • Maximum Gate Charge: 105nC @ 5V

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