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SI6423ADQ-T1-GE3

Part No SI6423ADQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET PCH 20V 10.3/12.5A 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs 9.8mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 168 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5875 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.5W (Ta), 2.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Base Product Number SI6423
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1379811-SI6423ADQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6423ADQ-T1-GE3 CAD Model

Description

The SI6423ADQ-T1-GE3 is a P-Channel MOSFET transistor from Vishay Siliconix's TrenchFET® series. It is designed for use in Discrete Semiconductor Products, specifically in Transistors, FETs, and MOSFETs.

  • Temperature Range: -55°C ~ 150°C
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 10.3A @ 25°C
  • Rds On: 9.8mOhm @ 10A, 4.5V
  • Gate Charge (Qg): 168nC @ 8V
  • Input Capacitance (Ciss): 5875pF @ 10V
  • Package: 8-TSSOP
  • Mounting Type: Surface Mount
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9653 $57.9180
150+ $0.7921 $118.8150
230+ $0.7673 $176.4790
315+ $0.7426 $233.9190
405+ $0.7179 $290.7495
540+ $0.6436 $347.5440
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,385 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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