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Same model may have multiple batches, images only for reference.
SI6459BDQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6459BDQ-T1-GE3

Part No SI6459BDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Base Product Number SI6459
Other Names SI6459BDQ-T1-GE3TR,SI6459BDQT1GE3,SI6459BDQ-T1-GE3DKR,SI6459BDQ-T1-GE3CT
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277545-SI6459BDQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6459BDQ-T1-GE3 CAD Model

Description

The SI6459BDQ-T1-GE3 MOSFET is a P-channel transistor with a drain to source voltage of 60V and a continuous drain current of 2.2A @ 25°C.

  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 2.2A @ 25°C
  • Maximum On-Resistance: 115mOhm @ a gate-source voltage of 10V and a drain current of 2.7A
  • Gate Threshold Voltage: 3V @ a drain current of 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Gate Charge: 22nC @ a gate-source voltage of 10V
  • Package: 8-TSSOP package with a width of 4.40mm

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