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SI6463BDQ-T1-GE3

Part No SI6463BDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 6.2A 8-Pin TSSOP T/R / MOSFET P-CH 20V 6.2A 8-TSSOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 800mV @ 250μA
Max Gate Charge 60nC @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.05W (Ta)
Maximum Rds On at Id,Vgs 15 mOhm @ 7.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Dimension 8-TSSOP (0.173", 4.40mm Width)
Win Source Part Number 1096105-SI6463BDQ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si6463BDQ
Introduction Date October 03, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI6463BDQ-T1-GE3 CAD Model

Description

The Si6463BDQ-T1-GE3 is a P-channel MOSFET from Vishay. Vishay Si6463BDQ-T1-GE3

  • Channel Type: P-channel
  • Power Dissipation (Max): 1.05W (Ta)
  • Package: 8-TSSOP
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6.2A (Ta)
  • Gate-Source Threshold Voltage: 800mV @ 250μA
  • Max Gate Charge @ 5V: 60nC
  • Maximum Rds On @ Id,Vgs: 15 mOhm @ 7.4A, 4.5V
  • Supply and Demand Status: balanced
  • Application: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9516 $61.8540
150+ $0.7809 $117.1350
230+ $0.7564 $173.9720
320+ $0.7320 $234.2400
410+ $0.7077 $290.1570
550+ $0.6345 $348.9750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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