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Same model may have multiple batches, images only for reference.
SI6466DQ-T1-E3
Same model may have multiple batches, images only for reference.

SI6466DQ-T1-E3

Part No SI6466DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 20V 7.8A 1.5W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 7.8 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 14 mΩ
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 1.5 W
Rise Time 30 ns
RoHS Compliant
Turn-Off Delay Time 130 ns
Win Source Part Number 1092918-SI6466DQ-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6466DQ-T1-E3 CAD Model

Description

This electronic component is a MOSFET transistor manufactured by Vishay.

  • Power Dissipation: 1.5W
  • Continuous Drain Current: 7.8A
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • Gate to Source Voltage: 12V
  • Drain to Source Breakdown Voltage: 20V
  • Supply and Demand Status: shortage

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