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Same model may have multiple batches, images only for reference.
SI6467DQ-T1-E3
Same model may have multiple batches, images only for reference.

SI6467DQ-T1-E3

Part No SI6467DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 8 A
Drain to Source Breakdown Voltage 12 V
Drain to Source Resistance 14 mΩ
Element Configuration Single
Fall Time 50 ns
Gate to Source Voltage (Vgs) 8 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Power Dissipation 1.5 W
Rise Time 50 ns
RoHS Compliant
Turn-Off Delay Time 220 ns
Win Source Part Number 1092919-SI6467DQ-T1-E3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI6467DQ-T1-E3 CAD Model

Description

The Vishay SI6467DQ-T1-E3 is a single FET MOSFET.

  • Power Dissipation: 1.5W
  • Rise and Fall Time: 50ns
  • Continuous Drain Current: 8A
  • Drain to Source Breakdown Voltage: 12V
  • Turn-Off Delay Time: 220ns
  • Drain to Source Resistance: 14mΩ
  • Package: TSSOP
  • Maximum Operating Temperature: 150°C
  • Supply and Demand Status: shortage

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