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SI6514DQ-T1-E3

Part No SI6514DQ-T1-E3
Manufacturer Vishay
Catalog HOT - SALES and EOL Components (S)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 322506-SI6514DQ-T1-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6514DQ-T1-E3 CAD Model

Description

The SI6514DQ-T1-E3 is an N-Channel 20 V (D-S) MOSFET from Vishay. It's engineered for efficient power management and high-speed switching applications. The MOSFET features a low on-resistance (RDS(on)) and optimized gate charge, making it suitable for use in portable devices, DC-DC converters, and load switching circuits.

Applications:

  • Load Switching: Used to control power to various components in electronic devices.
  • Power Management: Implemented in power supplies and DC-DC converters for efficient voltage regulation.
  • Portable Devices: Ideal for smartphones, tablets, and other battery-powered equipment.
  • DC-DC Converters: Employed in voltage regulation circuits to improve efficiency.

Features:

  • Low On-Resistance (RDS(on)): Minimizes power loss and enhances overall efficiency.
  • Fast Switching Speed: Enables rapid switching transitions, reducing switching losses.
  • N-Channel MOSFET: Provides efficient current handling capabilities.
  • 20V Drain-Source Voltage: Suitable for low-voltage applications.
  • TrenchFET® Power MOSFET Technology: Delivers excellent current handling and efficiency.

Benefits:

  • Improved Power Efficiency: Reduces energy consumption and extends battery life in portable devices.
  • Reduced Heat Dissipation: Low RDS(on) minimizes heat generation, improving system reliability.
  • Simplified Circuit Design: N-Channel configuration simplifies low-side switching implementations.
  • Enhanced System Performance: Fast switching speed improves the responsiveness of electronic devices.
  • Compact Footprint: Facilitates smaller and more compact designs.

Additional Details:

The SI6514DQ-T1-E3 is packaged in a PowerPAK® SC-70 package, known for its excellent thermal performance. Its low RDS(on) at VGS = 4.5V and VGS = 2.5V ensures efficient operation across a range of gate drive voltages. The 'E3' suffix indicates compliance with RoHS standards, making it environmentally friendly. Its low gate charge (Qg) further enhances its switching efficiency. The maximum continuous drain current (ID) rating ensures it can handle significant loads. Applications frequently include those where board space is limited, but high performance is essential. This MOSFET is optimized for low voltage operation and high efficiency switching, commonly found in battery-powered applications.

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