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SI6875DQ-T1-E3

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Part No	SI6875DQ-T1-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	Dual MOSFETs 20V 6.4A
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Mounting	SMD (SMT)
Case / Package	TSSOP
Continuous Drain Current (ID)	6.4 A
Drain to Source Breakdown Voltage	20 V
Drain to Source Resistance	27 mΩ
Element Configuration	Dual
Fall Time	27 ns
Gate to Source Voltage (Vgs)	8 V
Maximum Operating Temperature	150 °C
Min Operating Temperature	-55 °C
Power Dissipation	1.19 W
Rise Time	27 ns
RoHS	Compliant
Turn-Off Delay Time	170 ns
Win Source Part Number	1092922-SI6875DQ-T1-E3
Categories	Transistors - FETs, MOSFETs - RF
Manufacturer	Vishay
Popularity	Low
Supply and Demand Status	Shortage
Ultra Librarian 3D Model	Ultra Librarian SI6875DQ-T1-E3 CAD Model

Alternative Products

Description

The Vishay SI6875DQ-T1-E3 is a radio frequency (RF) MOSFET that belongs to the transistors - FETs, MOSFETs - RF family.

This MOSFET is designed to: provide high-frequency performance and low on-resistance.
It is a: low-popularity component due to its specific use in certain electronic devices.
Maximum Operating Temperature: 150°C
Continuous Drain Current: 6.4A

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