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SI6913DQ-T1-GE3

Part No SI6913DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 12V 4.9A 8-Pin TSSOP T/R / MOSFET 2P-CH 12V 4.9A 8-TSSOP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4.9A
Maximum Rds On at Id,Vgs 21 mOhm @ 5.8A, 4.5V
Gate-Source Threshold Voltage 900mV @ 400μA
Max Gate Charge 28nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 064541-SI6913DQ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si6913DQ
Introduction Date September 10, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI6913DQ-T1-GE3 CAD Model

Description

The supply and demand status of this product is balanced.

  • Manufacturer: Vishay
  • Family Name: Si6913DQ
  • FET Type: P-Channel
  • Feature: Dual, Logic Level Gate
  • Package: 8-TSSOP
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 4.9A
  • Gate-Source Threshold Voltage @ 400μA: 900mV
  • Maximum Rds On @ Id,Vgs: 21 mOhm @ 5.8A, 4.5V
  • Introduction Date: September 10, 2003
  • Estimated EOL Date: 2027
  • Status: Common-used part
  • ECCN: EAR99
  • Halogen Free: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0712 $53.5600
115+ $0.8790 $101.0850
180+ $0.8515 $153.2700
245+ $0.8240 $201.8800
315+ $0.7966 $250.9290
425+ $0.7142 $303.5350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 156,597 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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