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SI6954ADQ-T1-E3

Part No SI6954ADQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 3.1A 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.1A
Maximum Rds On at Id,Vgs 53 mOhm @ 3.4A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 16nC @ 10V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1096116-SI6954ADQ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6954ADQ-T1-E3 CAD Model

Description

The Vishay SI6954ADQ-T1-E3 is a dual N-channel FET that has a logic level gate.

  • Manufacturer: Vishay
  • Channel Type: Dual N-channel
  • Gate Type: Logic Level
  • Mounting Technology: surface-mount technology (SMT)
  • Market Popularity: popular
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case: 8-TSSOP
  • Power Dissipation (Max): 830mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 3.1A
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Max Gate Charge: 16nC @ 10V
  • Maximum Rds On: 53 mOhm @ 3.4A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5536 $58.1280
255+ $0.4543 $115.8465
395+ $0.4401 $173.8395
545+ $0.4259 $232.1155
705+ $0.4118 $290.3190
940+ $0.3691 $346.9540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,600 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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