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Same model may have multiple batches, images only for reference.
SI6955ADQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6955ADQ-T1-GE3

Part No SI6955ADQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 8nC @ 5V
Power - Max 830mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP
Base Product Number SI6955
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278464-SI6955ADQ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI6955ADQ-T1-GE3 CAD Model

Description

The SI6955ADQ-T1-GE3 is a Dual P-Channel MOSFET (Metal Oxide) transistor from Vishay Siliconix.

  • Series: TrenchFET®
  • Package: Tape & Reel
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current: 2.5A
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
  • Gate Charge: 8nC @ 5V
  • Power: 830mW
  • Package: 8-TSSOP (0.173", 4.40mm Width)
  • Temperature Range: -55°C ~ 150°C (TJ)

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