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Same model may have multiple batches, images only for reference.
SI6966DQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6966DQ-T1-GE3

Part No SI6966DQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 4A 8TSSOP
Datasheet
SI6966DQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 30 mOhm @ 4.5A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 20nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 1096119-SI6966DQ-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI6966DQ-T1-GE3 CAD Model

Description

The Vishay SI6966DQ-T1-GE3 is a dual N-channel MOSFET that has a maximum power dissipation of 830mW and a drain-source breakdown voltage of 20V.

  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4A
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 4.5A, 4.5V
  • Status: obsolete
  • Popularity: medium

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