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SI6967DQ-T1-E3

Part No SI6967DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 8TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Maximum Rds On at Id,Vgs 30 mOhm @ 5A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 40nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 103062-SI6967DQ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI6967DQ-T1-E3 CAD Model

Description

The SI6967DQ-T1-E3 is a high-quality FET that is manufactured by Vishay.

  • Applications: Designed to be used in a wide range of electronic devices, including power management, safety, consumer electronics, and computers.
  • Drain-Source Breakdown Voltage: 8V
  • Maximum Rds On: 30 mOhm @ 5A, 4.5V
  • Mounting: Surface mount technology
  • Package: Reel
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2568 $62.8400
115+ $1.0312 $118.5880
175+ $0.9990 $174.8250
240+ $0.9667 $232.0080
310+ $0.9345 $289.6950
415+ $0.8378 $347.6870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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