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Same model may have multiple batches, images only for reference.
SI6968BEDQ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI6968BEDQ-T1-GE3

Part No SI6968BEDQ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.2A 8-TSSOP
Datasheet
SI6968BEDQ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A
Maximum Rds On at Id,Vgs 22 mOhm @ 6.5A, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSSOP
Win Source Part Number 028590-SI6968BEDQ-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI6968BEDQ-T1-GE3 CAD Model

Description

The Vishay 028590-SI6968BEDQ-T1-GE3 is a dual N-Channel common drain logic level gate FET that is commonly used in industrial and power management applications.

  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 18nC @ 4.5V
  • Package: 8-TSSOP
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 6.5A, 4.5V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,980 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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