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Same model may have multiple batches, images only for reference.
SI7110DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7110DN-T1-E3

Part No SI7110DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 13.5A 1212-8
Datasheet
SI7110DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 21nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 21.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028596-SI7110DN-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7110DN-T1-E3 CAD Model

Description

The SI7110DN-T1-E3 is an N-channel MOSFET transistor from Vishay, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 13.5A @ 25°C
  • Maximum Rds on: 5.3 mOhm @ 21.1A and 10V drive voltage
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 21nC @ 4.5V
  • Case/Package: PowerPAK 1212-8
  • Maximum Power Dissipation: 1.5W (Ta)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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Availability: 34,000 pieces
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