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SI7110DN-T1-GE3

Name: SI7110DN-T1-GE3
Brand: Vishay
SKU: 322586
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SI7110DN-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 20V 13.5A 1212-8
Datasheet	SI7110DN-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.5V @ 250μA
Max Gate Charge	21nC @ 4.5V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	1.5W (Ta)
Maximum Rds On at Id,Vgs	5.3 mOhm @ 21.1A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PowerPAK 1212-8
Dimension	PowerPAK 1212-8
Win Source Part Number	097082-SI7110DN-T1-GE3
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SI7110DN-T1-GE3 CAD Model

Alternative Products

Description

The Vishay 097082-SI7110DN-T1-GE3 is a MOSFET designed for use in electronic circuits.

Popularity: High
Supply and Demand Status: Sufficient
Manufacturer: Vishay
Win Source Part Number: 097082-SI7110DN-T1-GE3
Operating Temperature Range: -55°C to 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Use case: electronic circuits that require a MOSFET

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
180+	$0.3269	$58.8420
435+	$0.2680	$116.5800
670+	$0.2599	$174.1330
920+	$0.2518	$231.6560
1,185+	$0.2437	$288.7845
1,590+	$0.2183	$347.0970

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 34,000 pieces

MOQ: 180 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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