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Same model may have multiple batches, images only for reference.
SI7112DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7112DN-T1-E3

Part No SI7112DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.3A 1212-8
Datasheet
SI7112DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2610pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 17.8A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028597-SI7112DN-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7112DN-T1-E3 CAD Model

Description

The SI7112DN-T1-E3 is a high popularity electronic component manufactured by Vishay.

  • Win Source Part Number: 028597-SI7112DN-T1-E3
  • Description: high-performance N-channel MOSFET designed for use in a wide range of applications including power management, motor control, and load switching
  • Package: PowerPAK 1212-8
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Continuous Drain Current: 11.3 A

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2146 $60.7300
120+ $0.9967 $119.6040
180+ $0.9655 $173.7900
250+ $0.9344 $233.6000
320+ $0.9032 $289.0240
430+ $0.8098 $348.2140
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,280 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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