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Same model may have multiple batches, images only for reference.
SI7120DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7120DN-T1-E3

Part No SI7120DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 60-V (D-S) MOSFET
Datasheet
SI7120DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 3.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 45nC @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs 19 mOhm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK 1212-8
Package PowerPAK 1212-8
Win Source Part Number 1249402-SI7120DN-T1-E3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7120DN-T1-E3 CAD Model

Description

The Vishay SI7120DN-T1-E3 is a TrenchFET MOSFET with a continuous drain current of 6.3A (Ta) and a drain source voltage of 60V.

  • Continuous Drain Current: 6.3A (Ta)
  • Drain Source Voltage: 60V
  • Gate Charge (Qg): 45nC @ 10V
  • Rds On (Maximum): 19 mOhm @ 10A, 10V
  • Mounting Technology: Surface Mount
  • Package: PowerPAK 1212-8
  • Gate Threshold Voltage: 3.5V @ 250μA
  • Maximum Power Dissipation: 1.5W (Ta)
  • Alternative Part Cross-Reference: STL8N6F7, STL35N6F3, Si7120DN-E3
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6147 $64.5880
90+ $1.3248 $119.2320
140+ $1.2832 $179.6480
190+ $1.2416 $235.9040
245+ $1.2012 $294.2940
325+ $1.0765 $349.8625
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Availability: 2,530 pieces
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