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SI7157DP-T1-GE3

Part No SI7157DP-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 20V 60A PPAK SO-8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 60A
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Maximum) at Id, Vgs 1.6mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 1.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 625nC at 10V
Gate Source Voltage (Maximum) ±12V
Input Capacitance (Ciss) (Maximum) at Vds 22000pF at 10V
Power Dissipation (Maximum) 6.25W, 104W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK SO-8
Manufacturer Package PowerPAK SO-8
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 759042-SI7157DP-T1-GE3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7157DP-T1-GE3 CAD Model

Description

The Vishay Siliconix 759042-SI7157DP-T1-GE3 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 60A
  • Maximum Rds On: 1.6mOhm @ 25A and 10V gate-source voltage
  • Gate Charge: 625nC @ 10V
  • Input Capacitance: 22000pF @ 10V drain-source voltage
  • Package: PowerPAK SO-8
  • Power Dissipation: 6.25W and 104W maximum
  • Drive Voltage: 2.5V for maximum Rds On and 10V for minimum Rds On
  • Operating Temperature Range: -55°C to 150°C
  • Suitable for: power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4599 $51.0965
85+ $1.1979 $101.8215
130+ $1.1605 $150.8650
180+ $1.1230 $202.1400
235+ $1.0856 $255.1160
310+ $0.9733 $301.7230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,124 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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