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Same model may have multiple batches, images only for reference.
SI7160DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7160DP-T1-GE3

Part No SI7160DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A PPAK SO-8
Datasheet
SI7160DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 2970pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 5W (Ta), 27.7W (Tc)
Maximum Rds On at Id,Vgs 8.7 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096143-SI7160DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7160DP-T1-GE3 CAD Model

Description

The Vishay SI7160DP-T1-GE3 is an N-Channel MOSFET with a drain-source breakdown voltage of 30V.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 5W (Ta), 27.7W (Tc)
  • Continuous Drain Current: 20A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Input Capacitance: 2970pF @ 15V
  • Maximum Rds On at Id,Vgs: 8.7 mOhm @ 15A, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Packaging: PowerPAK SO-8
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Status: Obsolete (EOL)

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