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Same model may have multiple batches, images only for reference.
SI7216DN-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI7216DN-T1-E3

Part No SI7216DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 6A 1212-8
Datasheet
SI7216DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 32 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 670pF @ 20V
Maximum Power Dissipation 20.8W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 046876-SI7216DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7216DN-T1-E3 CAD Model

Description

The Vishay 046876-SI7216DN-T1-E3 is a dual N-channel standard FET designed for use in discrete semiconductor products.

  • Manufacturer: Vishay
  • Channel Type: dual N-channel
  • FET Type: standard
  • Application: discrete semiconductor products
  • Power Dissipation: 20.8W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (25°C): 6A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 19nC @ 10V
  • Maximum Input Capacitance: 670pF @ 20V
  • Maximum Rds On (Id,Vgs): 32 mOhm @ 5A, 10V
  • Supply and Demand: Limited
  • Package: PowerPAK 1212-8 Dual

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9767 $58.6020
145+ $0.8015 $116.2175
225+ $0.7764 $174.6900
310+ $0.7514 $232.9340
400+ $0.7263 $290.5200
535+ $0.6512 $348.3920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,200 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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