The SI7308DN-TI-GE3 is a P-Channel 30 V (D-S) MOSFET from Vishay. This MOSFET is designed for efficient power management in a variety of applications. It offers a low on-resistance, which minimizes power loss and enhances overall system efficiency. The device is RoHS-compliant and halogen-free.

Applications

• Load Switching
• DC-DC Conversion
• Power Management in Portable Devices
• Battery Management Systems

Features

• P-Channel MOSFET
• Low On-Resistance (RDS(on))
• 30V Drain-Source Voltage (VDS)
• High Current Capability
• Logic Level Gate Drive
• TrenchFET® Power MOSFET Technology
• RoHS Compliant and Halogen-Free

Benefits

• Enhanced Efficiency: Low on-resistance minimizes power losses, improving overall system efficiency.
• Compact Design: Small footprint allows for use in space-constrained applications.
• Reliable Performance: Robust design ensures stable and consistent performance in demanding conditions.
• Environmentally Friendly: RoHS compliant and halogen-free, contributing to environmental sustainability.
• Simplified Design: Logic level gate drive simplifies the driving circuitry and reduces component count.

Additional Details

The SI7308DN-TI-GE3 comes in a PowerPAK® SC-70 package, ensuring excellent thermal performance. Its low gate charge and fast switching speed make it suitable for high-frequency applications. The device's maximum continuous drain current (ID) is specified in the datasheet, varying with the applied gate voltage and temperature. The MOSFET is designed to operate within a specified temperature range, ensuring consistent performance across varying environmental conditions.