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Same model may have multiple batches, images only for reference.
SI7342DP-T1 Real Image
Same model may have multiple batches, images only for reference.

SI7342DP-T1

Part No SI7342DP-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A PPAK SO-8
Datasheet
SI7342DP-T1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1900pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8.25 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064557-SI7342DP-T1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7342DP-T1 CAD Model

Description

The Vishay 064557-SI7342DP-T1 is an N-channel polarity MOSFET with a medium popularity and limited supply and demand status.

  • Power Dissipation (Max): 1.8W (Ta)
  • Drive Voltage: 4.5V, 10V
  • Maximum Rds On: 8.25 mOhm @ 15A, 10V
  • Maximum Gate Charge: 19nC @ 4.5V
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK SO-8

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