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Same model may have multiple batches, images only for reference.
SI7380ADP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7380ADP-T1-GE3

Part No SI7380ADP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A PPAK SO-8
Datasheet
SI7380ADP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 185nC @ 10V
Max Input Capacitance 7785pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096157-SI7380ADP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Quantity per package 6k pcs
Ultra Librarian 3D Model Ultra Librarian SI7380ADP-T1-GE3 CAD Model

Description

The Vishay SI7380ADP-T1-GE3 is an N-channel MOSFET with a power dissipation of 5.4W (Ta) and 83W (Tc).

  • Channel Type: N-channel
  • Power Dissipation: 5.4W (Ta), 83W (Tc)
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On: 3 mOhm @ 20A, 10V
  • Continuous Drain Current: 40A (Tc)
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 185nC @ 10V
  • Maximum Input Capacitance: 7785pF @ 15V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK SO-8

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