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Same model may have multiple batches, images only for reference.
SI7384DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7384DP-T1-E3

Part No SI7384DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A PPAK SO-8
Datasheet
SI7384DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 135839-SI7384DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7384DP-T1-E3 CAD Model

Description

The Vishay SI7384DP-T1-E3 is a MOSFET transistor with an N-channel polarity and a PowerPAK SO-8 case/package.

  • Channel Type: N-channel
  • Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On: 8.5 mOhm @ 18A, 10V
  • Power Dissipation (Max): 1.8W (Ta)
  • Mounting: SMD (SMT) technology
  • Drive Voltage: 4.5V, 10V
  • Status: active
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
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Availability: 4,337 pieces
MOQ: 75 pcs
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