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Same model may have multiple batches, images only for reference.
SI3585DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3585DV-T1-GE3

Part No SI3585DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 2A 6-TSOP
Datasheet
SI3585DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A, 1.5A
Maximum Rds On at Id,Vgs 125 mOhm @ 2.4A, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 3.2nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 138614-SI3585DV-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3585DV-T1-GE3 CAD Model

Description

The Vishay SI3585DV-T1-GE3 is an N and P-channel MOSFET with a logic level gate.

  • Maximum Voltage Rating: 20 V
  • Maximum Current Rating: 2 A
  • Package: 6-TSOP
  • Low On-Resistance: 125 mOhm
  • Low Gate Charge: 3.2 nC

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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Availability: 27,954 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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