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Same model may have multiple batches, images only for reference.
SI7423DN Vishay
Same model may have multiple batches, images only for reference.

SI7423DN

Part No SI7423DN
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.4A 1212-8
Datasheet
SI7423DN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 56nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 11.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 092760-SI7423DN
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7423DN CAD Model

Description

The Vishay SI7423DN is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 7.4A (Ta)
  • Maximum Rds On at Id, Vgs: 18 mOhm @ 11.7A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 56nC @ 10V
  • Supply and Demand Status: Limited

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