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SI7439DP-T1-E3

Part No SI7439DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 3A PPAK SO-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 135nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 064567-SI7439DP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI7439DP-T1-E3 CAD Model

Description

The Vishay SI7439DP-T1-E3 is a P-channel MOSFET with a drain-source breakdown voltage of 150V and a continuous drain current of 3A (Ta).

  • Package: PowerPAK SO-8
  • Maximum Rds On: 90 mOhm @ 5.2A, 10V
  • Maximum Gate Charge: 135nC @ 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Supply and Demand Status: Limited
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.6872 $51.1848
22+ $4.6664 $102.6608
34+ $4.5206 $153.7004
46+ $4.3748 $201.2408
60+ $4.2290 $253.7400
80+ $3.7915 $303.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,973 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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