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Same model may have multiple batches, images only for reference.
SI7446BDP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7446BDP-T1-E3

Part No SI7446BDP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A PPAK SO-8
Datasheet
SI7446BDP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 33nC @ 5V
Max Input Capacitance 3076pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 028641-SI7446BDP-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7446BDP-T1-E3 CAD Model

Description

The Vishay 028641-SI7446BDP-T1-E3 is a MOSFET N-channel power transistor that belongs to the Discrete Semiconductor Products category.

  • Manufacturer: Vishay
  • Available at: Win Source
  • Supply and Demand Status: Limited
  • Package: PowerPAK SO-8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 12A (Ta)
  • Maximum Rds On at Id,Vgs: 7.5 mOhm @ 19A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 33nC @ 5V

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90+ $1.3500 $121.5000
135+ $1.3078 $176.5530
185+ $1.2656 $234.1360
240+ $1.2234 $293.6160
320+ $1.0968 $350.9760
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